AP9980GM-HF Todos los transistores

 

AP9980GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9980GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SO8

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AP9980GM-HF datasheet

 ..1. Size:97K  ape
 ap9980gm-hf.pdf pdf_icon

AP9980GM-HF

AP9980GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 D1 Single Drive Requirement RDS(ON) 52m D1 Surface Mount Package ID 4.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 6.1. Size:209K  ape
 ap9980gm.pdf pdf_icon

AP9980GM-HF

AP9980GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 52m D1 D1 Surface Mount Package ID 4.6A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d

 7.1. Size:233K  ape
 ap9980gh-hf.pdf pdf_icon

AP9980GM-HF

AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe

 7.2. Size:218K  ape
 ap9980gj.pdf pdf_icon

AP9980GM-HF

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo

MOSTRAR MÁS

Otros transistores... AP9971AGJ-HF , AP9971AGS-HF , AP9971GH-HF , AP9971GJ-HF , AP9974GS , AP9977AGH-HF , AP9980GH-HF , AP9980GJ-HF , IRF540N , AP9915GK , AP9916GH , AP9916GJ , AP9918GH , AP9938GEY-HF , AP9938GEYT-HF , AP9960GH-HF , AP9960GJ-HF .

 

 

 


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