AP9980GM-HF Specs and Replacement

Type Designator: AP9980GM-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SO8

AP9980GM-HF substitution

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AP9980GM-HF datasheet

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ap9980gm-hf.pdf pdf_icon

AP9980GM-HF

AP9980GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 D1 Single Drive Requirement RDS(ON) 52m D1 Surface Mount Package ID 4.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fa... See More ⇒

 6.1. Size:209K  ape
ap9980gm.pdf pdf_icon

AP9980GM-HF

AP9980GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 52m D1 D1 Surface Mount Package ID 4.6A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d... See More ⇒

 7.1. Size:233K  ape
ap9980gh-hf.pdf pdf_icon

AP9980GM-HF

AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe... See More ⇒

 7.2. Size:218K  ape
ap9980gj.pdf pdf_icon

AP9980GM-HF

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo... See More ⇒

Detailed specifications: AP9971AGJ-HF, AP9971AGS-HF, AP9971GH-HF, AP9971GJ-HF, AP9974GS, AP9977AGH-HF, AP9980GH-HF, AP9980GJ-HF, IRF540N, AP9915GK, AP9916GH, AP9916GJ, AP9918GH, AP9938GEY-HF, AP9938GEYT-HF, AP9960GH-HF, AP9960GJ-HF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs