IRFIB5N65A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFIB5N65A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 48(max) nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 177 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.93 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET IRFIB5N65A

IRFIB5N65A Datasheet (PDF)

..1. Size:103K international rectifier
irfib5n65a.pdf

PD-91816BSMPS MOSFETIRFIB5N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacita

..2. Size:235K international rectifier
irfib5n65apbf.pdf

PD-94837SMPS MOSFETIRFIB5N65APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 650V 0.93 5.1Al High Speed Power Switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt RuggednessG D S

..3. Size:141K vishay
irfib5n65a sihfib5n65a.pdf

IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19

..4. Size:274K inchange semiconductor
irfib5n65a.pdf

iscN-Channel MOSFET Transistor IRFIB5N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

7.1. Size:517K international rectifier
irfib5n50l.pdf

PD - 94522SMPS MOSFETIRFIB5N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. IDl Switch Mode Power Supply (SMPS)500V 0.67 73ns 4.7Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessTO-220 Full-Pakl Fully Chara

7.2. Size:197K international rectifier
irfib5n50lpbf.pdf

PD - 95390IRFIB5N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.67 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

7.3. Size:806K vishay
irfib5n50lpbf.pdf

IRFIB5N50L, SiHFIB5N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsRoHSRDS(on) ()VGS = 10 V 0.67COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 45ReqirementsQgs (nC) 13Qgd (nC) 23 Enhanced dV/dt Capabilities Offer Improved Ruggedness

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