Справочник MOSFET. IRFIB5N65A

 

IRFIB5N65A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFIB5N65A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 177 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.93 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFIB5N65A

 

 

IRFIB5N65A Datasheet (PDF)

 ..1. Size:103K  international rectifier
irfib5n65a.pdf

IRFIB5N65A
IRFIB5N65A

PD-91816BSMPS MOSFETIRFIB5N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacita

 ..2. Size:235K  international rectifier
irfib5n65apbf.pdf

IRFIB5N65A
IRFIB5N65A

PD-94837SMPS MOSFETIRFIB5N65APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 650V 0.93 5.1Al High Speed Power Switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt RuggednessG D S

 ..3. Size:141K  vishay
irfib5n65a sihfib5n65a.pdf

IRFIB5N65A
IRFIB5N65A

IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19

 ..4. Size:274K  inchange semiconductor
irfib5n65a.pdf

IRFIB5N65A
IRFIB5N65A

iscN-Channel MOSFET Transistor IRFIB5N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 7.1. Size:517K  international rectifier
irfib5n50l.pdf

IRFIB5N65A
IRFIB5N65A

PD - 94522SMPS MOSFETIRFIB5N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. IDl Switch Mode Power Supply (SMPS)500V 0.67 73ns 4.7Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessTO-220 Full-Pakl Fully Chara

 7.2. Size:197K  international rectifier
irfib5n50lpbf.pdf

IRFIB5N65A
IRFIB5N65A

PD - 95390IRFIB5N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.67 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 7.3. Size:806K  vishay
irfib5n50lpbf.pdf

IRFIB5N65A
IRFIB5N65A

IRFIB5N50L, SiHFIB5N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsRoHSRDS(on) ()VGS = 10 V 0.67COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 45ReqirementsQgs (nC) 13Qgd (nC) 23 Enhanced dV/dt Capabilities Offer Improved Ruggedness

Другие MOSFET... IRFI9530G , IRFI9540N , IRFI9620G , IRFI9630G , IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRF3205 , IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G .

 

 
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