AP70T03AJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70T03AJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 53 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO251

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AP70T03AJ datasheet

 ..1. Size:71K  ape
 ap70t03ah ap70t03aj.pdf pdf_icon

AP70T03AJ

AP70T03AH/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low o

 6.1. Size:72K  ape
 ap70t03as ap70t03ap.pdf pdf_icon

AP70T03AJ

AP70T03AS/P Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G S Description G The Advanced Power MOSFETs from APEC provide the D S TO-263(S) designer with the best combination of fast switching, ruggedized dev

 7.1. Size:121K  ape
 ap70t03gi.pdf pdf_icon

AP70T03AJ

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.2. Size:98K  ape
 ap70t03gh-hf ap70t03gj-hf.pdf pdf_icon

AP70T03AJ

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des

MOSTRAR MÁS

Otros transistores... AP9916GH, AP9916GJ, AP9918GH, AP9938GEY-HF, AP9938GEYT-HF, AP9960GH-HF, AP9960GJ-HF, AP70T03AH, IRFP260N, AP70T03AS, AP70T03GH-HF, AP70U02GH, AP72T03GJ-HF, AP72T03GP, AP75T10GS-HF, AP76T03AGMT-HF, AP7811GM