AP72T03GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP72T03GJ-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 62 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 82 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de AP72T03GJ-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP72T03GJ-HF datasheet
ap72t03gj-hf.pdf
AP72T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant & Halogen-Free S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast s
ap72t03gh-hf ap72t03gj-hf.pdf
AP72T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant & Halogen-Free S Description G D AP72T03 series are from Advanced Power innovated design and silicon S TO-252(H) process technology to
ap72t03gh ap72t03gj.pdf
AP72T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,
ap72t03gp.pdf
AP72T03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
Otros transistores... AP9938GEYT-HF , AP9960GH-HF , AP9960GJ-HF , AP70T03AH , AP70T03AJ , AP70T03AS , AP70T03GH-HF , AP70U02GH , 10N60 , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , AP7811GM , AP4800AGM , AP4816GSM , AP4835GM-HF , AP4880GEM .
History: STT3457P | AD90N03S | SPD65R360G | AP9916GJ | SP3902 | WMQ30N04TS | AP9916GH
History: STT3457P | AD90N03S | SPD65R360G | AP9916GJ | SP3902 | WMQ30N04TS | AP9916GH
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