AP72T03GJ-HF Todos los transistores

 

AP72T03GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP72T03GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 62 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 82 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO251

 Búsqueda de reemplazo de AP72T03GJ-HF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP72T03GJ-HF datasheet

 ..1. Size:96K  ape
ap72t03gj-hf.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant & Halogen-Free S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast s

 ..2. Size:229K  ape
ap72t03gh-hf ap72t03gj-hf.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant & Halogen-Free S Description G D AP72T03 series are from Advanced Power innovated design and silicon S TO-252(H) process technology to

 5.1. Size:96K  ape
ap72t03gh ap72t03gj.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

 6.1. Size:94K  ape
ap72t03gp.pdf pdf_icon

AP72T03GJ-HF

AP72T03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Otros transistores... AP9938GEYT-HF , AP9960GH-HF , AP9960GJ-HF , AP70T03AH , AP70T03AJ , AP70T03AS , AP70T03GH-HF , AP70U02GH , 10N60 , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , AP7811GM , AP4800AGM , AP4816GSM , AP4835GM-HF , AP4880GEM .

History: STT3457P | AD90N03S | SPD65R360G | AP9916GJ | SP3902 | WMQ30N04TS | AP9916GH

 

 

 

 

↑ Back to Top
.