AP72T03GJ-HF Todos los transistores

 

AP72T03GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP72T03GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO251
 

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AP72T03GJ-HF Datasheet (PDF)

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 ap72t03gj-hf.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast s

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 ap72t03gh-hf ap72t03gj-hf.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDAP72T03 series are from Advanced Power innovated design and siliconS TO-252(H)process technology to

 5.1. Size:96K  ape
 ap72t03gh ap72t03gj.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

 6.1. Size:94K  ape
 ap72t03gp.pdf pdf_icon

AP72T03GJ-HF

AP72T03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP9938GEYT-HF , AP9960GH-HF , AP9960GJ-HF , AP70T03AH , AP70T03AJ , AP70T03AS , AP70T03GH-HF , AP70U02GH , IRFB4227 , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , AP7811GM , AP4800AGM , AP4816GSM , AP4835GM-HF , AP4880GEM .

History: NX3008NBKV | 2SK1478 | IXFT12N100F | BRFL13N50 | CEF02N6G | 2SK65 | UTT25P10L-TQ2-T

 

 
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