AP72T03GJ-HF. Аналоги и основные параметры

Наименование производителя: AP72T03GJ-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 62 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 82 ns

Cossⓘ - Выходная емкость: 250 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: TO251

Аналог (замена) для AP72T03GJ-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP72T03GJ-HF даташит

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 ap72t03gj-hf.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant & Halogen-Free S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast s

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 ap72t03gh-hf ap72t03gj-hf.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant & Halogen-Free S Description G D AP72T03 series are from Advanced Power innovated design and silicon S TO-252(H) process technology to

 5.1. Size:96K  ape
 ap72t03gh ap72t03gj.pdf pdf_icon

AP72T03GJ-HF

AP72T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

 6.1. Size:94K  ape
 ap72t03gp.pdf pdf_icon

AP72T03GJ-HF

AP72T03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

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