AP4800AGM Todos los transistores

 

AP4800AGM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4800AGM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 11.4 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SO8

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AP4800AGM Datasheet (PDF)

 ..1. Size:93K  ape
ap4800agm.pdf

AP4800AGM
AP4800AGM

AP4800AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de

 0.1. Size:93K  ape
ap4800agm-hf.pdf

AP4800AGM
AP4800AGM

AP4800AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AG RoHS Compliant SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 8.1. Size:80K  ape
ap4800gm.pdf

AP4800AGM
AP4800AGM

AP4800GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 18m DSimple Drive Requirement ID 9A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

 8.2. Size:94K  ape
ap4800dgm-hf.pdf

AP4800AGM
AP4800AGM

AP4800DGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 18mD Fast Switching Characteristic ID 9AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas

 8.3. Size:95K  ape
ap4800gyt-hf.pdf

AP4800AGM
AP4800AGM

AP4800GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device design, low on-resis

 8.4. Size:223K  ape
ap4800gem.pdf

AP4800AGM
AP4800AGM

AP4800GEMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 18mD Low On-resistance ID 9.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4800 series are from Advanced Power innovated design andGsilicon process technolog

 8.5. Size:57K  ape
ap4800cgm-hf.pdf

AP4800AGM
AP4800AGM

AP4800CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 14mD Fast Switching Characteristic ID 10.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 8.6. Size:615K  ape
ap4800n2.pdf

AP4800AGM
AP4800AGM

AP4800N2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant ProductSTop viewDD D SDescriptionDSAP4800 series are from Advanced Power innovated design andsilicon proc

 8.7. Size:94K  ape
ap4800bgm-hf.pdf

AP4800AGM
AP4800AGM

AP4800BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AG RoHS Compliant SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3607-01MR

 

 
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History: 2SK3607-01MR

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