AP4957AGM-HF Todos los transistores

 

AP4957AGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4957AGM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SO8
 

 Búsqueda de reemplazo de AP4957AGM-HF MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP4957AGM-HF Datasheet (PDF)

 ..1. Size:95K  ape
 ap4957agm-hf.pdf pdf_icon

AP4957AGM-HF

AP4957AGM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best com

 5.1. Size:178K  ape
 ap4957agm.pdf pdf_icon

AP4957AGM-HF

AP4957AGMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de

 7.1. Size:1931K  cn apm
 ap4957a.pdf pdf_icon

AP4957AGM-HF

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS DR

 8.1. Size:72K  ape
 ap4957gm.pdf pdf_icon

AP4957AGM-HF

AP4957GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 24mD1D1 Dual P MOSFET Package ID -7.7AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the b

MOSTRAR MÁS

Otros transistores... AP76T03AGMT-HF , AP7811GM , AP4800AGM , AP4816GSM , AP4835GM-HF , AP4880GEM , AP4953GM , AP4955GM-HF , 2SK3878 , AP50T03GH , AP50T03GJ , AP5523GM-HF , AP9575GH , AP9575GI , AP9575GJ , AP9575GM-HF , AP9576GM-HF .

History: AP150N03D

 

 
Back to Top

 


 
.