AP4957AGM-HF Datasheet and Replacement
Type Designator: AP4957AGM-HF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 6.5
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package:
SO8
- MOSFET Cross-Reference Search
AP4957AGM-HF Datasheet (PDF)
..1. Size:95K ape
ap4957agm-hf.pdf 
AP4957AGM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best com
5.1. Size:178K ape
ap4957agm.pdf
AP4957AGMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de
8.1. Size:72K ape
ap4957gm.pdf
AP4957GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 24mD1D1 Dual P MOSFET Package ID -7.7AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the b
9.1. Size:182K ape
ap4951gm.pdf
AP4951GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD2D2D1 Low Gate Charge RDS(ON) 96mD1 Fast Switching Performance ID -3.4AG2S2G1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized d
9.2. Size:177K ape
ap4959gm.pdf
AP4959GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Lower Turn-on Voltage BVDSS -16VD2D1 Simple Drive Requirement RDS(ON) 65mD1 Dual P MOSFET Package ID -4.7AG2S2SO-8G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized
9.3. Size:97K ape
ap4951gm-hf.pdf
AP4951GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD2D2D1 Low Gate Charge RDS(ON) 96mD1 Fast Switching Performance ID -3.4AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combin
9.4. Size:94K ape
ap4955gm-hf.pdf
AP4955GM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS -20VD2D1 Low Gate Charge RDS(ON) 45mD1 Fast Switching Characteristic ID -5.6AG2S2 RoHS Compliant & Halogen-FreeG1S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best comb
9.5. Size:92K ape
ap4953gm-hf.pdf
AP4953GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Low Gate Charge RDS(ON) 53mD1D1 Fast Switching ID -5AG2 RoHS CompliantS2G1SO-8S1D2Description D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G2G
9.6. Size:94K ape
ap4955gm.pdf
AP4955GMRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS -20VD2D1 Low Gate Charge RDS(ON) 45mD1 Fast Switching Characteristic ID -5.6AG2S2G1S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedize
9.7. Size:201K ape
ap4953gm.pdf
AP4953GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Low Gate Charge RDS(ON) 53mD1D1 Fast Switching ID -5AG2S2G1SO-8S1D2Description D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G2G1ruggedized device
9.9. Size:1774K cn vbsemi
ap4951gm.pdf
AP4951GMwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi
9.10. Size:1753K cn vbsemi
ap4953m.pdf
AP4953Mwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View
9.11. Size:864K cn vbsemi
ap4953gm.pdf
AP4953GMwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie
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