AP4957AGM-HF MOSFET: P-Ch, 30V, 7.4A. Full datasheet with pinout, specifications and replacement transistor list

AP4957AGM-HF Datasheet (PDF)

..1. Size:95K ape
ap4957agm-hf.pdf pdf_icon

AP4957AGM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best com

5.1. Size:178K ape
ap4957agm.pdf pdf_icon

AP4957AGMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de

7.1. Size:1931K cn apm
ap4957a.pdf pdf_icon

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS DR

8.1. Size:72K ape
ap4957gm.pdf pdf_icon

AP4957GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 24mD1D1 Dual P MOSFET Package ID -7.7AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the b

Datasheet: AP76T03AGMT-HF , AP7811GM , AP4800AGM , AP4816GSM , AP4835GM-HF , AP4880GEM , AP4953GM , AP4955GM-HF , 2SK3878 , AP50T03GH , AP50T03GJ , AP5523GM-HF , AP9575GH , AP9575GI , AP9575GJ , AP9575GM-HF , AP9576GM-HF .