AP9575GI Todos los transistores

 

AP9575GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9575GI

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO220F

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AP9575GI datasheet

 ..1. Size:93K  ape
ap9575gi.pdf pdf_icon

AP9575GI

AP9575GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, l

 0.1. Size:94K  ape
ap9575gi-hf.pdf pdf_icon

AP9575GI

AP9575GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast swit

 7.1. Size:98K  ape
ap9575gh ap9575gj.pdf pdf_icon

AP9575GI

AP9575GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl

 7.2. Size:57K  ape
ap9575gm-hf.pdf pdf_icon

AP9575GI

AP9575GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V D D D Simple Drive Requirement RDS(ON) 90m D Fast Switching Characteristic ID -4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

Otros transistores... AP4880GEM , AP4953GM , AP4955GM-HF , AP4957AGM-HF , AP50T03GH , AP50T03GJ , AP5523GM-HF , AP9575GH , IRLB4132 , AP9575GJ , AP9575GM-HF , AP9576GM-HF , AP9577GI-HF , AP9578GI-HF , AP9578GJ , AP95T07GS-HF , AP95T10AGR-HF .

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