Справочник MOSFET. AP9575GI

 

AP9575GI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9575GI
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP9575GI

 

 

AP9575GI Datasheet (PDF)

 ..1. Size:93K  ape
ap9575gi.pdf

AP9575GI
AP9575GI

AP9575GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AGDTO-220CFM(I)SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, l

 0.1. Size:94K  ape
ap9575gi-hf.pdf

AP9575GI
AP9575GI

AP9575GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-Free DTO-220CFM(I)SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast swit

 7.1. Size:98K  ape
ap9575gh ap9575gj.pdf

AP9575GI
AP9575GI

AP9575GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AGSDescriptionGDThe TO-252 package is widely preferred for commercial-industrial STO-252(H)surface mount applications and suited for low voltage appl

 7.2. Size:57K  ape
ap9575gm-hf.pdf

AP9575GI
AP9575GI

AP9575GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60VDDD Simple Drive Requirement RDS(ON) 90mD Fast Switching Characteristic ID -4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 7.3. Size:65K  ape
ap9575gm.pdf

AP9575GI
AP9575GI

AP9575GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60VDDD Simple Drive Requirement RDS(ON) 90mD Fast Switching Characteristic ID -4AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

 7.4. Size:97K  ape
ap9575gp-hf ap9575gs-hf.pdf

AP9575GI
AP9575GI

AP9575GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,D

 7.5. Size:98K  ape
ap9575gh-hf ap9575gj-hf.pdf

AP9575GI
AP9575GI

AP9575GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for commercial-industrialSTO-252(H)surface mount applications and suite

 7.6. Size:52K  ape
ap9575gs-hf ap9575gp-hf.pdf

AP9575GI
AP9575GI

AP9575GS/P-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP9575 series are from Advanced Power innovate

 7.7. Size:1425K  cn vbsemi
ap9575gh.pdf

AP9575GI
AP9575GI

AP9575GHwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb

 7.8. Size:838K  cn vbsemi
ap9575gj.pdf

AP9575GI
AP9575GI

AP9575GJwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

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