AP9575GI - описание и поиск аналогов

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 ap9575gi.pdf 

AP9575GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, l

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 ap9575gi-hf.pdf 

AP9575GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast swit

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 ap9575gh ap9575gj.pdf 

AP9575GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl

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 ap9575gm-hf.pdf 

AP9575GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V D D D Simple Drive Requirement RDS(ON) 90m D Fast Switching Characteristic ID -4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 7.3. Size:65K  ape
 ap9575gm.pdf 

AP9575GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V D D D Simple Drive Requirement RDS(ON) 90m D Fast Switching Characteristic ID -4A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi

 7.4. Size:97K  ape
 ap9575gp-hf ap9575gs-hf.pdf 

AP9575GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D

 7.5. Size:98K  ape
 ap9575gh-hf ap9575gj-hf.pdf 

AP9575GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suite

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 ap9575gj-hf ap9575gh-hf.pdf 

AP9575GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP9575 series are from Advanced Power innovated design and silicon G D S process technology to achieve th

 7.7. Size:52K  ape
 ap9575gs-hf ap9575gp-hf.pdf 

AP9575GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free S Description AP9575 series are from Advanced Power innovate

 7.8. Size:1425K  cn vbsemi
 ap9575gh.pdf 

AP9575GH www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb

 7.9. Size:838K  cn vbsemi
 ap9575gj.pdf 

AP9575GJ www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par