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AP60T10GS-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60T10GS-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 67 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 55 nC
   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO263
 
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AP60T10GS-HF Datasheet (PDF)

 ..1. Size:96K  ape
 ap60t10gp-hf ap60t10gs-hf.pdf pdf_icon

AP60T10GS-HF

AP60T10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi

 5.1. Size:95K  ape
 ap60t10gp ap60t10gs.pdf pdf_icon

AP60T10GS-HF

AP60T10GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO-220(P)ruggedized device design,

 6.1. Size:58K  ape
 ap60t10gi-hf.pdf pdf_icon

AP60T10GS-HF

AP60T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 34AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-res

 8.1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

AP60T10GS-HF

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

MOSTRAR MÁS

Otros transistores... AP98T03GP , AP98T06GP-HF , AP60L02GJ , AP60T03AH , AP60T03AJ , AP60T03AS , AP60T03GJ , AP60T10GP-HF , IRF1407 , AP60U02GH , AP60U03GH , AP62T02GJ , AP9410GM-HF , AP9412AGM , AP9412BGM , AP9435GJ-HF , AP9435GM .

History: FQH90N15

 

 
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