AP60T10GS-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP60T10GS-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 167 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 67 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 68 ns
Cossⓘ - Выходная емкость: 400 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO263
- подбор MOSFET транзистора по параметрам
AP60T10GS-HF Datasheet (PDF)
ap60t10gp-hf ap60t10gs-hf.pdf

AP60T10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi
ap60t10gp ap60t10gs.pdf

AP60T10GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO-220(P)ruggedized device design,
ap60t10gi-hf.pdf

AP60T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 34AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-res
nceap60t15g.pdf

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R
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History: 2SK3385-Z | MTB23P06VT4 | FHD5N65B | SSE90N10-14 | IRF7807VTRPBF-1 | SUM27N20-78 | FQT7N10LTF
History: 2SK3385-Z | MTB23P06VT4 | FHD5N65B | SSE90N10-14 | IRF7807VTRPBF-1 | SUM27N20-78 | FQT7N10LTF



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