AP9410GM-HF Todos los transistores

 

AP9410GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9410GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 660 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP9410GM-HF Datasheet (PDF)

 ..1. Size:96K  ape
ap9410gm-hf.pdf pdf_icon

AP9410GM-HF

AP9410GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 6mDD Fast Switching ID 18AGSSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-

 6.1. Size:58K  ape
ap9410gmt-hf.pdf pdf_icon

AP9410GM-HF

AP9410GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive D BVDSS 30V Simple Drive Requirement RDS(ON) 5.5m SO-8 Compatible ID 80AG Low On-resistanceS RoHS Compliant & Halogen-FreeDDDDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combina

 6.2. Size:70K  ape
ap9410gm.pdf pdf_icon

AP9410GM-HF

AP9410GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 30V DDLow On-resistance RDS(ON) 6m DDFast Switching ID 18A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 7.1. Size:229K  ape
ap9410gh.pdf pdf_icon

AP9410GM-HF

AP9410GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP9410 series are from Advanced Power innovated design andGDsilicon process technology to achieve the lowes

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History: G2003 | TDM3424 | 2SK3541MGP | SI12N60-F | TPC8045-H | UT4812 | ZVN0545GTC

 

 
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