AP9435GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9435GM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.7 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP9435GM MOSFET
AP9435GM Datasheet (PDF)
ap9435gm.pdf

AP9435GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low Gate Charge RDS(ON) 50mD Fast Switching ID -5.3AGSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon
ap9435gm.pdf

AP9435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop
ap9435gm-hf.pdf

AP9435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low Gate Charge RDS(ON) 50mD Fast Switching ID -5.3AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized devic
ap9435gh ap9435gj.pdf

AP9435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20AGSDescriptionGDAdvanced Power MOSFETs utilized advanced processing techniques to S TO-252(H)achieve the lowest possible on-resistance, extremely efficient and cost-
Otros transistores... AP60T10GS-HF , AP60U02GH , AP60U03GH , AP62T02GJ , AP9410GM-HF , AP9412AGM , AP9412BGM , AP9435GJ-HF , STP80NF70 , AP9435GP-HF , AP9450GMT-HF , AP9468GM-HF , AP9474GM-HF , AP9477GM , AP9561GM-HF , AP9563GK-HF , AP9564GM-HF .
History: HAT2174N | VBZE50N04 | IXTQ96N25T | AOD4N60 | CJB04N65 | AP02N40J-HF | STW33N60DM2
History: HAT2174N | VBZE50N04 | IXTQ96N25T | AOD4N60 | CJB04N65 | AP02N40J-HF | STW33N60DM2



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
irfp350 | 13003 transistor | c458 transistor | 2sc1775 | 2n1305 | 2sc5242 | irf540 equivalent | mp1620 transistor equivalent