AP9435GM PDF and Equivalents Search

 

AP9435GM Specs and Replacement

Type Designator: AP9435GM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO8

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AP9435GM datasheet

 ..1. Size:177K  ape
 ap9435gm.pdf pdf_icon

AP9435GM

AP9435GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒

 ..2. Size:805K  cn vbsemi
 ap9435gm.pdf pdf_icon

AP9435GM

AP9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top ... See More ⇒

 0.1. Size:169K  ape
 ap9435gm-hf.pdf pdf_icon

AP9435GM

AP9435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic... See More ⇒

 7.1. Size:98K  ape
 ap9435gh ap9435gj.pdf pdf_icon

AP9435GM

AP9435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to S TO-252(H) achieve the lowest possible on-resistance, extremely efficient and cost- ... See More ⇒

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Detailed specifications: AP60T10GS-HF, AP60U02GH, AP60U03GH, AP62T02GJ, AP9410GM-HF, AP9412AGM, AP9412BGM, AP9435GJ-HF, 10N65, AP9435GP-HF, AP9450GMT-HF, AP9468GM-HF, AP9474GM-HF, AP9477GM, AP9561GM-HF, AP9563GK-HF, AP9564GM-HF

Keywords - AP9435GM MOSFET specs

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