AP9474GM-HF Todos los transistores

 

AP9474GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9474GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: SO8

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AP9474GM-HF datasheet

 ..1. Size:93K  ape
 ap9474gm-hf.pdf pdf_icon

AP9474GM-HF

AP9474GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D D Single Drive Requirement RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast sw

 6.1. Size:92K  ape
 ap9474gm.pdf pdf_icon

AP9474GM-HF

AP9474GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D Single Drive Requirement D RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design

 6.2. Size:812K  cn vbsemi
 ap9474gm.pdf pdf_icon

AP9474GM-HF

AP9474GM www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CC

 9.1. Size:94K  ape
 ap9475gm-hf.pdf pdf_icon

AP9474GM-HF

AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

MOSTRAR MÁS

Otros transistores... AP9410GM-HF , AP9412AGM , AP9412BGM , AP9435GJ-HF , AP9435GM , AP9435GP-HF , AP9450GMT-HF , AP9468GM-HF , AO3407 , AP9477GM , AP9561GM-HF , AP9563GK-HF , AP9564GM-HF , AP9565AGH-HF , AP9565AGJ-HF , AP9566GM-HF , AP6900GH-HF .

History: AP9870GH

 

 

 

 

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