IRFIBC40GLC Todos los transistores

 ..1. Size:229K  international rectifier
 irfibc40glc.pdf

 ..2. Size:993K  international rectifier
 irfibc40glcpbf.pdf

PD - 94860 IRFIBC40GLCPbF Lead-Free 12/03/03 Document Number 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 4 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 5 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 6 IRFIBC

 ..3. Size:1601K  vishay
 irfibc40glc sihfibc40glc.pdf

IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati

 ..4. Size:275K  inchange semiconductor
 irfibc40glc.pdf

iscN-Channel MOSFET Transistor IRFIBC40GLC FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 5.1. Size:912K  international rectifier
 irfibc40g.pdf

PD - 94857 IRFIBC40GPbF Lead-Free 11/20/03 Document Number 91182 www.vishay.com 1 IRFIBC40GPbF Document Number 91182 www.vishay.com 2 IRFIBC40GPbF Document Number 91182 www.vishay.com 3 IRFIBC40GPbF Document Number 91182 www.vishay.com 4 IRFIBC40GPbF Document Number 91182 www.vishay.com 5 IRFIBC40GPbF Document Number 91182 www.vishay.com 6 IRFIBC40GPbF TO-

 5.2. Size:1441K  vishay
 irfibc40g sihfibc40g.pdf

IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing

 5.3. Size:275K  inchange semiconductor
 irfibc40g.pdf

iscN-Channel MOSFET Transistor IRFIBC40G FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN