AP9564GM-HF Todos los transistores

 

AP9564GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9564GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SO8

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AP9564GM-HF datasheet

 ..1. Size:95K  ape
 ap9564gm-hf.pdf pdf_icon

AP9564GM-HF

AP9564GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Low On-resistance RDS(ON) 28m D Fast Switching Characteristic ID -7.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.1. Size:95K  ape
 ap9564gm.pdf pdf_icon

AP9564GM-HF

AP9564GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Low On-resistance RDS(ON) 28m D Fast Switching Characteristic ID -7.3A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d

 6.2. Size:827K  cn vbsemi
 ap9564gm.pdf pdf_icon

AP9564GM-HF

AP9564GM www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1

 9.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9564GM-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

MOSTRAR MÁS

Otros transistores... AP9435GM , AP9435GP-HF , AP9450GMT-HF , AP9468GM-HF , AP9474GM-HF , AP9477GM , AP9561GM-HF , AP9563GK-HF , IRF2807 , AP9565AGH-HF , AP9565AGJ-HF , AP9566GM-HF , AP6900GH-HF , AP6900GSM-HF , AP6901GH-HF , AP6902GH-HF , AP6905GH-HF .

History: AP9474GM-HF | AP9565AGJ-HF | AP3P080N | AP9870GH

 

 

 

 

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