AP90T03GS Todos los transistores

 

AP90T03GS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP90T03GS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 83 nS

Cossⓘ - Capacitancia de salida: 1010 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO263

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AP90T03GS datasheet

 ..1. Size:158K  ape
 ap90t03gs.pdf pdf_icon

AP90T03GS

AP90T03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(S)

 0.1. Size:92K  ape
 ap90t03gs-hf.pdf pdf_icon

AP90T03GS

AP90T03GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 6.1. Size:206K  ape
 ap90t03gh ap90t03gj.pdf pdf_icon

AP90T03GS

AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On- resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description G The TO-252 package is widely preferred for commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage ap

 6.2. Size:124K  ape
 ap90t03gr.pdf pdf_icon

AP90T03GS

AP90T03GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide thede signer with the best combination of fast switching, ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP6923O , AP6950GMT-HF , AP6982GM-HF , AP6985GN2-HF , AP85T03GH-HF , AP85T03GJ-HF , AP85T08GP , AP85T10GR-HF , AON7403 , AP90T03P-HF , AP90T10GP-HF , AP92LT10GP-HF , AP92T03GH , AP92T03GS , AP93T03AGH-HF , IRF231 , IRF232 .

History: AP3P080N | AP9870GH | AP9474GM-HF

 

 

 

 

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