AP90T03GS PDF and Equivalents Search

 

AP90T03GS Specs and Replacement

Type Designator: AP90T03GS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 83 nS

Cossⓘ - Output Capacitance: 1010 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

AP90T03GS substitution

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AP90T03GS datasheet

 ..1. Size:158K  ape
ap90t03gs.pdf pdf_icon

AP90T03GS

AP90T03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(S)... See More ⇒

 0.1. Size:92K  ape
ap90t03gs-hf.pdf pdf_icon

AP90T03GS

AP90T03GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

 6.1. Size:206K  ape
ap90t03gh ap90t03gj.pdf pdf_icon

AP90T03GS

AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On- resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description G The TO-252 package is widely preferred for commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage ap... See More ⇒

 6.2. Size:124K  ape
ap90t03gr.pdf pdf_icon

AP90T03GS

AP90T03GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide thede signer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

Detailed specifications: AP6923O, AP6950GMT-HF, AP6982GM-HF, AP6985GN2-HF, AP85T03GH-HF, AP85T03GJ-HF, AP85T08GP, AP85T10GR-HF, AON7403, AP90T03P-HF, AP90T10GP-HF, AP92LT10GP-HF, AP92T03GH, AP92T03GS, AP93T03AGH-HF, IRF231, IRF232

Keywords - AP90T03GS MOSFET specs

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