AP90T10GP-HF Todos los transistores

 

AP90T10GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP90T10GP-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 125 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 755 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO220

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AP90T10GP-HF datasheet

 ..1. Size:56K  ape
 ap90t10gp-hf.pdf pdf_icon

AP90T10GP-HF

AP90T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 7m Fast Switching Characteristic ID 125A G RoHS Compliant & Halogen-Free S Description AP90T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 9.1. Size:206K  ape
 ap90t03gh ap90t03gj.pdf pdf_icon

AP90T10GP-HF

AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On- resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description G The TO-252 package is widely preferred for commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage ap

 9.2. Size:93K  ape
 ap90t06gp-hf.pdf pdf_icon

AP90T10GP-HF

AP90T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 68V Lower On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 76A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 9.3. Size:124K  ape
 ap90t03gr.pdf pdf_icon

AP90T10GP-HF

AP90T03GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide thede signer with the best combination of fast switching, ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP6982GM-HF , AP6985GN2-HF , AP85T03GH-HF , AP85T03GJ-HF , AP85T08GP , AP85T10GR-HF , AP90T03GS , AP90T03P-HF , EMB04N03H , AP92LT10GP-HF , AP92T03GH , AP92T03GS , AP93T03AGH-HF , IRF231 , IRF232 , IRF233 , IRF240SMD .

History: AP3P080N | AP9870GH | AP9474GM-HF

 

 

 

 

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