All MOSFET. AP90T10GP-HF Datasheet

 

AP90T10GP-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP90T10GP-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 125 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 210 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 755 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220

 AP90T10GP-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP90T10GP-HF Datasheet (PDF)

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