IRF431 Todos los transistores

 ..1. Size:211K  samsung
 irf430 irf431 irf432 irf433.pdf

 9.1. Size:146K  international rectifier
 2n6762 irf430.pdf

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces

 9.2. Size:141K  fairchild semi
 irf430.pdf

 9.3. Size:56K  intersil
 irf430-3.pdf

IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Features Power MOSFET 4.5A, 500V This N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500 effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mo

 9.4. Size:222K  inchange semiconductor
 irf430.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF430 DESCRIPTION silicon Gate for fast switching at elevate rugged low drive requirements ease of paralleling Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. A