IRF431 MOSFET Datasheet: N-Ch, 450V, 4.5A. Full specification with pinout and replacement list

IRF431 Specs and Replacement

Type Designator: IRF431

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO3

IRF431 substitution

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IRF431 datasheet

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IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Features Power MOSFET 4.5A, 500V This N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500 effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mo... See More ⇒