IRF431 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF431
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3
IRF431 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF431 Datasheet (PDF)
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irf430-3.pdf
IRF430Data Sheet March 1999 File Number 1572.44.5A, 500V, 1.500 Ohm, N-Channel FeaturesPower MOSFET 4.5A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mo
irf430.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF430DESCRIPTIONsilicon Gate for fast switching at elevateruggedlow drive requirementsease of parallelingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications such asSwitching power supplies,AC and DCmotor controlsrelay and solenoid driver.A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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