IRF433 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

IRF430Data Sheet March 1999 File Number 1572.44.5A, 500V, 1.500 Ohm, N-Channel FeaturesPower MOSFET 4.5A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mo

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF430DESCRIPTIONsilicon Gate for fast switching at elevateruggedlow drive requirementsease of parallelingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications such asSwitching power supplies,AC and DCmotor controlsrelay and solenoid driver.A