IRF4410H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF4410H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 97 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO263

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IRF4410H Datasheet (PDF)

..1. Size:671K nell
irf4410a irf4410h.pdf

RoHS IRF4410 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(97A, 100Volts)DESCRIPTION The Nell IRF4410 is a three-terminal silicon Ddevice with current conduction capability of 97A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts.G They are designed for use in application

8.1. Size:132K njs
irf440 irf441 irf442 irf443.pdf

8.2. Size:229K inchange semiconductor
irf441.pdf

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF441FEATURESV Rated at 20VGSSilicon Gate for Fast Switching SpeedsI ,V ,SOA and V specified at ElevatedDSS DS(on) GS(th)temperatureRuggedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as

9.1. Size:211K international rectifier
irf4435.pdf

PD- 94243IRF4435HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon ar

9.2. Size:142K international rectifier
irf440.pdf

PD - 90372AREPETITIVE AVALANCHE AND dv/dt RATED IRF440500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF440 500V 0.85 8.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

9.3. Size:822K cn vbsemi
irf4435tr.pdf

IRF4435TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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