IRF4410H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF4410H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 97 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 430 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IRF4410H MOSFET
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IRF4410H datasheet
irf4410a irf4410h.pdf
RoHS IRF4410 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (97A, 100Volts) DESCRIPTION The Nell IRF4410 is a three-terminal silicon D device with current conduction capability of 97A, D fast switching speed, low on-state resistance, breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts. G They are designed for use in application
irf441.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF441 FEATURES V Rated at 20V GS Silicon Gate for Fast Switching Speeds I ,V ,SOA and V specified at Elevated DSS DS(on) GS(th) temperature Rugged Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as
irf4435.pdf
PD- 94243 IRF4435 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon ar
Otros transistores... IRF423 , IRF431 , IRF432 , IRF433 , IRF441 , IRF442 , IRF443 , IRF4410A , TK10A60D , IRF450B , IRF450C , IRF460B , IRF460C , IRF510PBF , IRF510STRLPBF , IRF510STRRPBF , IRLMS1503PBF-1 .
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