IRF4410H Datasheet and Replacement
Type Designator: IRF4410H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 97 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO263
IRF4410H Datasheet (PDF)
irf4410a irf4410h.pdf

RoHS IRF4410 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(97A, 100Volts)DESCRIPTION The Nell IRF4410 is a three-terminal silicon Ddevice with current conduction capability of 97A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts.G They are designed for use in application
irf441.pdf

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF441FEATURESV Rated at 20VGSSilicon Gate for Fast Switching SpeedsI ,V ,SOA and V specified at ElevatedDSS DS(on) GS(th)temperatureRuggedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as
irf4435.pdf

PD- 94243IRF4435HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon ar
Datasheet: IRF423 , IRF431 , IRF432 , IRF433 , IRF441 , IRF442 , IRF443 , IRF4410A , IRFZ24N , IRF450B , IRF450C , IRF460B , IRF460C , IRF510PBF , IRF510STRLPBF , IRF510STRRPBF , IRLMS1503PBF-1 .
History: STW75NF20 | AON1611 | ZVP4424G | AP04N60I-A-HF | TK40S10K3Z
Keywords - IRF4410H MOSFET datasheet
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History: STW75NF20 | AON1611 | ZVP4424G | AP04N60I-A-HF | TK40S10K3Z



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