IRLMS1503PBF-1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLMS1503PBF-1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.4 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SOT457
Búsqueda de reemplazo de IRLMS1503PBF-1 MOSFET
IRLMS1503PBF-1 datasheet
irlms1503pbf-1.pdf
IRLMS1503PbF-1 HEXFET Power MOSFET VDS 30 V A 1 6 D D RDS(on) max 0.10 (@V = 10V) GS 2 5 D D RDS(on) max 0.20 (@V = 4.5V) GS 3 4 G S Qg (typical) 6.4 nC Micro6 ID Top View 3.2 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing
irlms1503pbf.pdf
PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 30V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
irlms1503.pdf
PD - 9.1508C IRLMS1503 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 30V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged
irlms1902.pdf
PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged
Otros transistores... IRF4410H , IRF450B , IRF450C , IRF460B , IRF460C , IRF510PBF , IRF510STRLPBF , IRF510STRRPBF , 5N60 , IRLMS1503PBF , IRLMS1902PBF , IRLMS2002PBF , IRLMS5703PBF , IRLMS6702PBF-1 , IRLMS6702PBF , IRLMS6802PBF , IRF1503L .
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