IRLMS1503PBF-1 MOSFET Datasheet: N-Ch, 30V, 3.2A. Full specification with pinout and replacement list

IRLMS1503PBF-1 Specs and Replacement

Type Designator: IRLMS1503PBF-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT457

IRLMS1503PBF-1 substitution

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IRLMS1503PBF-1 datasheet

..1. Size:192K international rectifier
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IRLMS1503PbF-1 HEXFET Power MOSFET VDS 30 V A 1 6 D D RDS(on) max 0.10 (@V = 10V) GS 2 5 D D RDS(on) max 0.20 (@V = 4.5V) GS 3 4 G S Qg (typical) 6.4 nC Micro6 ID Top View 3.2 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing ... See More ⇒

2.1. Size:150K international rectifier
irlms1503pbf.pdf pdf_icon

PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 30V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

5.1. Size:108K international rectifier
irlms1503.pdf pdf_icon

PD - 9.1508C IRLMS1503 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 30V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged... See More ⇒

8.1. Size:108K international rectifier
irlms1902.pdf pdf_icon

PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged... See More ⇒