IRLMS6802PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLMS6802PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT26
Búsqueda de reemplazo de IRLMS6802PBF MOSFET
IRLMS6802PBF Datasheet (PDF)
irlms6802pbf.pdf

PD- 94897IRLMS6802PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell Lead-Free3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi
irlms6802.pdf

PD- 91848EIRLMS6802HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reel3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitprov
irlms6802trpbf.pdf

IRLMS6802TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm
irlms6702.pdf

PD - 91414CIRLMS6702HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = -20Vl Ultra Low RDS(on)25DDl P-Channel MOSFET34G S RDS(on) = 0.20DescriptionFifth Generation HEXFET power MOSFETs from Top ViewInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper silicon area. T
Otros transistores... IRF510STRRPBF , IRLMS1503PBF-1 , IRLMS1503PBF , IRLMS1902PBF , IRLMS2002PBF , IRLMS5703PBF , IRLMS6702PBF-1 , IRLMS6702PBF , IRFB31N20D , IRF1503L , IRF1503LPBF , IRF1503PBF , IRF1503SPBF , IRF150B , IRF150C , IRF150SMD , IRF1607PBF .
History: TK20A20D | SFW9614 | WTL2602 | WFJ5N65B | TK10E80W | CS25N06B3 | KTK598TV
History: TK20A20D | SFW9614 | WTL2602 | WFJ5N65B | TK10E80W | CS25N06B3 | KTK598TV



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