IRF150B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS IRF150 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET42A, 100VoltsDESCRIPTIOND The Nell IRF150 is a three-terminal silicon devicewith current conduction capability of 42A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

PD - 90337GREPETITIVE AVALANCHE AND dv/dt RATED IRF150HEXFETTRANSISTORS JANTX2N6764THRU-HOLE (TO-204AA/AE) JANTXV2N6764[REF:MIL-PRF-19500/543]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF150 100V 0.055 38AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

PD - 95432AIRF1503SPbFIRF1503LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VBenefitsl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) = 3.3mGl 175C Operating Temperaturel Fast SwitchingID = 75Al Repetitive Avalanche Allowed up to TjmaxSDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes th

PD-94526AAUTOMOTIVE MOSFETIRF1503Typical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VFeatures Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpeci

PD - 94494AIRF1503SIRF1503LTypical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VBenefits Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpecificall

PD-95438AIRF1503PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VFeatures Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.3mG 175C Operating Temperature Fast SwitchingID = 75A Repetitive Avalanche Allowed up to TjmaxSDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing techniques to

IRF150P220MOSFETPG-TO 247-3StrongIRFETFeatures Very low RDS(on) Excellent gate charge x R (FOM)DS(on) Optimized Qrr 175C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 123Benefits Reduced conduction losses Ideal for high switching frequencyDrain

IRF150P221MOSFETPG-TO 247-3StrongIRFETFeatures Very low RDS(on) Excellent gate charge x R (FOM)DS(on) Optimized Qrr 175C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 123Benefits Reduced conduction losses Ideal for high switching frequencyDrain

IRF150SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF150DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =0.055(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power supplies

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503 IIRF1503FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide v