All MOSFET. IRF150B Datasheet

 

IRF150B MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF150B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 56 nS

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO3PB

IRF150B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF150B Datasheet (PDF)

1.1. irf150b irf150c.pdf Size:414K _upd

IRF150B
IRF150B

RoHS IRF150 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION D The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

4.1. irf1503lpbf irf1503spbf.pdf Size:330K _upd

IRF150B
IRF150B

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3mΩ G l 175°C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes th

4.2. irf150smd.pdf Size:22K _upd

IRF150B
IRF150B

IRF150SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

 4.3. irf1503l irf1503s.pdf Size:661K _upd

IRF150B
IRF150B

PD - 94494A IRF1503S IRF1503L Typical Applications HEXFET® Power MOSFET ● 14V Automotive Electrical Systems D ● 14V Electronic Power Steering VDSS = 30V Benefits ● Advanced Process Technology RDS(on) = 3.3mΩ ● Ultra Low On-Resistance G ● 175°C Operating Temperature ● Fast Switching ID = 75A S ● Repetitive Avalanche Allowed up to Tjmax Description Specificall

4.4. irf1503pbf.pdf Size:268K _upd

IRF150B
IRF150B

PD-95438A IRF1503PbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3mΩ G 175°C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to

 4.5. irf150-1-2-3.pdf Size:380K _st2

IRF150B
IRF150B

4.6. irf1503.pdf Size:552K _international_rectifier

IRF150B
IRF150B

PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET Power MOSFET ? 14V Automotive Electrical Systems D ? 14V Electronic Power Steering VDSS = 30V Features ? Advanced Process Technology RDS(on) = 3.3m? ? Ultra Low On-Resistance G ? 175C Operating Temperature ? Fast Switching ID = 75A S ? Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for

4.7. irf150.pdf Size:150K _international_rectifier

IRF150B
IRF150B

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFET?TRANSISTORS JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055? 38A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

Datasheet: IRLMS5703PBF , IRLMS6702PBF-1 , IRLMS6702PBF , IRLMS6802PBF , IRF1503L , IRF1503LPBF , IRF1503PBF , IRF1503SPBF , IRLR2905 , IRF150C , IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF , IRF200B211 , IRLL2705PBF , IRLL3303PBF .

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