IRLL2705PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLL2705PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 3.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: SOT223
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IRLL2705PBF Datasheet (PDF)
irll2705pbf.pdf

PD- 95338IRLL2705PbFHEXFET Power MOSFETl Surface Mountl Dynamic dv/dt RatingDl Logic-Level Gate DriveVDSS = 55Vl Fast Switchingl Ease of ParallelingRDS(on) = 0.04l Advanced Process TechnologyGl Ultra Low On-ResistanceID = 3.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievee
auirll2705.pdf

AUTOMOTIVE GRADEAUIRLL2705FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-Resistance V(BR)DSS55Vl Logic Level Gate DriveRDS(on) max.l Dynamic dv/dt Rating 0.04Gl 150C Operating TemperatureSID3.8Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified*S
irll2705.pdf

PD- 91380BIRLL2705HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 55V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.04 Ease of ParallelingG Advanced Process TechnologyID = 3.8A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist
irll2705tr.pdf

IRLL2705TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB
Otros transistores... IRF1503SPBF , IRF150B , IRF150C , IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF , IRF200B211 , RU7088R , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF , IRFL014NPBF .
History: IRFB7530PBF | SI2369DS-T1 | SWK088R06VT | 2SK962 | IRLL014NPBF | SWHA055R03VT
History: IRFB7530PBF | SI2369DS-T1 | SWK088R06VT | 2SK962 | IRLL014NPBF | SWHA055R03VT



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