All MOSFET. IRLL2705PBF Datasheet

 

IRLL2705PBF Datasheet and Replacement


   Type Designator: IRLL2705PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT223
 

 IRLL2705PBF substitution

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IRLL2705PBF Datasheet (PDF)

 ..1. Size:220K  international rectifier
irll2705pbf.pdf pdf_icon

IRLL2705PBF

PD- 95338IRLL2705PbFHEXFET Power MOSFETl Surface Mountl Dynamic dv/dt RatingDl Logic-Level Gate DriveVDSS = 55Vl Fast Switchingl Ease of ParallelingRDS(on) = 0.04l Advanced Process TechnologyGl Ultra Low On-ResistanceID = 3.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievee

 6.1. Size:246K  international rectifier
auirll2705.pdf pdf_icon

IRLL2705PBF

AUTOMOTIVE GRADEAUIRLL2705FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-Resistance V(BR)DSS55Vl Logic Level Gate DriveRDS(on) max.l Dynamic dv/dt Rating 0.04Gl 150C Operating TemperatureSID3.8Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified*S

 6.2. Size:160K  international rectifier
irll2705.pdf pdf_icon

IRLL2705PBF

PD- 91380BIRLL2705HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 55V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.04 Ease of ParallelingG Advanced Process TechnologyID = 3.8A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

 6.3. Size:820K  cn vbsemi
irll2705tr.pdf pdf_icon

IRLL2705PBF

IRLL2705TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

Datasheet: IRF1503SPBF , IRF150B , IRF150C , IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF , IRF200B211 , RU7088R , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF , IRFL014NPBF .

History: IRF7473PBF

Keywords - IRLL2705PBF MOSFET datasheet

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