IRLL014NPBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRLL014NPBF datasheet

..1. Size:261K international rectifier
irll014npbf.pdf pdf_icon

PD- 95154 IRLL014NPbF l Surface Mount l Advanced Process Technology D DSS l Ultra Low On-Resistance l Dynamic dv/dt Rating DS(on) l Fast Switching G l Fully Avalanche Rated l Lead-Free D S Description

6.1. Size:158K international rectifier
irll014n.pdf pdf_icon

PD- 91499B IRLL014N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.14 Fast Switching G Fully Avalanche Rated ID = 2.0A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

6.2. Size:548K international rectifier
auirll014n.pdf pdf_icon

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150 C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

6.3. Size:2289K cn vbsemi
irll014ntr.pdf pdf_icon

IRLL014NTR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unle

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