IRLL024NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLL024NPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de IRLL024NPBF MOSFET
IRLL024NPBF Datasheet (PDF)
irll024npbf.pdf

PD - 95221IRLL024NPbFHEXFET Power MOSFET Surface Mount Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.065G Fully Avalanche Rated Lead-FreeID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
auirll024n.pdf

AUTOMOTIVE GRADEAUIRLL024NFeatures HEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT RatingRDS(on) max.0.065 150C Operating TemperatureG Fast Switching Fully Avalanche Rated SID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescription
irll024n.pdf

PD - 91895IRLL024NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.
irll024nq.pdf

PD-94152AUTOMOTIVE MOSFETIRLL024NQTypical ApplicationsHEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & SeatsD Cruise ControlVDSS = 55V Air BagsBenefitsRDS(on) = 0.065 Advanced Process TechnologyG Ultra Low On-Resistance 175C Operating TemperatureID = 3.1A Repetitive Avalanche Allowed up to TjmaxS Dynamic dv/d
Otros transistores... IRF1607PBF , IRF1704 , IRF1902PBF , IRF200B211 , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , AON7403 , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF , IRFL014NPBF , IRFL014PBF , IRFL024NPBF , IRFL024ZPBF , IRFL1006PBF .
History: IRFH5300 | 5N60L-TA3-T | TK60S06K3L | IPI120N08S4-04 | SSF4N60F | SM1F04NSF | WML28N50C4
History: IRFH5300 | 5N60L-TA3-T | TK60S06K3L | IPI120N08S4-04 | SSF4N60F | SM1F04NSF | WML28N50C4



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