IRLL024NPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLL024NPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: SOT223

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IRLL024NPBF datasheet

 ..1. Size:145K  international rectifier
 irll024npbf.pdf pdf_icon

IRLL024NPBF

PD - 95221 IRLL024NPbF HEXFET Power MOSFET Surface Mount Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching RDS(on) = 0.065 G Fully Avalanche Rated Lead-Free ID = 3.1A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

 6.1. Size:198K  international rectifier
 auirll024n.pdf pdf_icon

IRLL024NPBF

AUTOMOTIVE GRADE AUIRLL024N Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 0.065 150 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description

 6.2. Size:114K  international rectifier
 irll024n.pdf pdf_icon

IRLL024NPBF

PD - 91895 IRLL024N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.065 Fast Switching G Fully Avalanche Rated ID = 3.1A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

 6.3. Size:163K  international rectifier
 irll024nq.pdf pdf_icon

IRLL024NPBF

PD-94152 AUTOMOTIVE MOSFET IRLL024NQ Typical Applications HEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & Seats D Cruise Control VDSS = 55V Air Bags Benefits RDS(on) = 0.065 Advanced Process Technology G Ultra Low On-Resistance 175 C Operating Temperature ID = 3.1A Repetitive Avalanche Allowed up to Tjmax S Dynamic dv/d

MOSTRAR MÁS

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