Справочник MOSFET. IRLL024NPBF

 

IRLL024NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLL024NPBF
   Маркировка: LL024N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.4 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: SOT223

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IRLL024NPBF Datasheet (PDF)

 ..1. Size:142K  international rectifier
 irll024npbf.pdf

IRLL024NPBF IRLL024NPBF

PD - 95221IRLL024NPbFHEXFET Power MOSFET Surface Mount Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.065G Fully Avalanche Rated Lead-FreeID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 ..2. Size:145K  infineon
 irll024npbf.pdf

IRLL024NPBF IRLL024NPBF

PD - 95221IRLL024NPbFHEXFET Power MOSFET Surface Mount Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.065G Fully Avalanche Rated Lead-FreeID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 6.1. Size:198K  international rectifier
 auirll024n.pdf

IRLL024NPBF IRLL024NPBF

AUTOMOTIVE GRADEAUIRLL024NFeatures HEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT RatingRDS(on) max.0.065 150C Operating TemperatureG Fast Switching Fully Avalanche Rated SID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescription

 6.2. Size:114K  international rectifier
 irll024n.pdf

IRLL024NPBF IRLL024NPBF

PD - 91895IRLL024NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.

 6.3. Size:163K  international rectifier
 irll024nq.pdf

IRLL024NPBF IRLL024NPBF

PD-94152AUTOMOTIVE MOSFETIRLL024NQTypical ApplicationsHEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & SeatsD Cruise ControlVDSS = 55V Air BagsBenefitsRDS(on) = 0.065 Advanced Process TechnologyG Ultra Low On-Resistance 175C Operating TemperatureID = 3.1A Repetitive Avalanche Allowed up to TjmaxS Dynamic dv/d

 6.4. Size:822K  cn vbsemi
 irll024ntr.pdf

IRLL024NPBF IRLL024NPBF

IRLL024NTRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

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