IRLL110TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLL110TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
   Paquete / Cubierta: SOT223

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IRLL110TRPBF Datasheet (PDF)

..1. Size:351K vishay
irll110trpbf sihll110.pdf

IRLL110, SiHLL110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 100 Available in tape and reel Dynamic dV/dt ratingRDS(on) ()VGS = 5.0 V 0.54 Repetitive avalanche ratedQg (Max.) (nC) 6.1 Logic-level gate driveQgs (nC) 2.6 RDS(on) specified at VGS = 4 V and 5 V AvailableQgd (nC) 3.3 Fast switchingC

..2. Size:782K cn vbsemi
irll110trpbf.pdf

IRLL110TRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

7.1. Size:217K international rectifier
irll110.pdf

PD - 90869AIRLL110HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate DriveRDS(on) = 0.54 RDS(on)Specified at VGS= 4V & 5VG Fast SwitchingID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswit

7.2. Size:207K international rectifier
irll110pbf.pdf

PD - 95222IRLL110PbFHEXFET Power MOSFET Surface Mount Available in Tape & Reel D Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated Logic-Level Gate DriveRDS(on) = 0.54 RDS(on)Specified at VGS= 4V & 5VG Fast Switching Lead-FreeID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination o

7.3. Size:1437K vishay
irll110 sihll110.pdf

IRLL110, SiHLL110Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 100 Available in Tape and ReelAvailableRDS(on) ()VGS = 5.0 V 0.54 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 6.1 Repetitive Avalanche RatedCOMPLIANTQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Sin

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