IRLL110TRPBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRLL110TRPBF datasheet

..1. Size:351K vishay
irll110trpbf sihll110.pdf pdf_icon

IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 100 Available in tape and reel Dynamic dV/dt rating RDS(on) ( )VGS = 5.0 V 0.54 Repetitive avalanche rated Qg (Max.) (nC) 6.1 Logic-level gate drive Qgs (nC) 2.6 RDS(on) specified at VGS = 4 V and 5 V Available Qgd (nC) 3.3 Fast switching C

..2. Size:782K cn vbsemi
irll110trpbf.pdf pdf_icon

IRLL110TRPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET

7.1. Size:217K international rectifier
irll110.pdf pdf_icon

PD - 90869A IRLL110 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) = 0.54 RDS(on)Specified at VGS= 4V & 5V G Fast Switching ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swit

7.2. Size:207K international rectifier
irll110pbf.pdf pdf_icon

PD - 95222 IRLL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel D Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) = 0.54 RDS(on)Specified at VGS= 4V & 5V G Fast Switching Lead-Free ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination o