IRFL024NPBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFL024NPBF datasheet

..1. Size:140K international rectifier
irfl024npbf.pdf pdf_icon

PD - 95339 IRFL024NPbF HEXFET Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.075 l Fully Avalanche Rated G l Lead-Free ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

6.1. Size:110K international rectifier
irfl024n.pdf pdf_icon

PD - 91861A IRFL024N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.075 Fast Switching G Fully Avalanche Rated ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

6.2. Size:208K international rectifier
auirfl024n.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFL024N HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 75m Dynamic dV/dT Rating G 150 C Operating Temperature ID S 2.8A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified* S D Descri

7.1. Size:264K international rectifier
irfl024zpbf.pdf pdf_icon

PD - 95312A IRFL024ZPbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 57.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.1A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistan