IRFL024ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFL024ZPBF
   Código: FL024Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9.1 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0575 Ohm
   Paquete / Cubierta: SOT223

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IRFL024ZPBF Datasheet (PDF)

..1. Size:264K international rectifier
irfl024zpbf.pdf

PD - 95312AIRFL024ZPbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 57.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 5.1ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistan

..2. Size:264K infineon
irfl024zpbf.pdf

6.1. Size:269K international rectifier
irfl024z.pdf

PD - 95817IRFL024ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 57.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 5.1ASDescriptionSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest process

7.1. Size:110K international rectifier
irfl024n.pdf

PD - 91861AIRFL024NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.075 Fast SwitchingG Fully Avalanche RatedID = 2.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

7.2. Size:134K international rectifier
irfl024npbf.pdf

PD - 95339IRFL024NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.075l Fully Avalanche RatedGl Lead-FreeID = 2.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

7.3. Size:208K international rectifier
auirfl024n.pdf

AUTOMOTIVE GRADEAUIRFL024NHEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.75m Dynamic dV/dT Rating G 150C Operating TemperatureIDS 2.8A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Automotive Qualified*SDDescri

7.4. Size:140K infineon
irfl024npbf.pdf

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