IRFL1006PBF Todos los transistores

 

IRFL1006PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFL1006PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: SOT223
 

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IRFL1006PBF Datasheet (PDF)

 ..1. Size:129K  international rectifier
 irfl1006pbf.pdf pdf_icon

IRFL1006PBF

PD - 95316IRFL1006PbFHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedG Lead-FreeID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefi

 6.1. Size:127K  international rectifier
 irfl1006.pdf pdf_icon

IRFL1006PBF

PD - 91876IRFL1006HEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedGID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined wi

 9.1. Size:197K  international rectifier
 irfl110pbf.pdf pdf_icon

IRFL1006PBF

PD - 95317IRFL110PbFHEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive Requirements Lead-FreeID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fast

 9.2. Size:244K  international rectifier
 irfl110.pdf pdf_icon

IRFL1006PBF

PD - 90861AIRFL110HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive RequirementsID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rug

MOSTRAR MÁS

Otros transistores... IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF , IRFL014NPBF , IRFL014PBF , IRFL024NPBF , IRFL024ZPBF , BS170 , IRFL110PBF , IRFL210PBF , IRFL214PBF , IRFL4105PBF , IRFL4310PBF , IRFL4315PBF , IRFL9014PBF , IRFL9110PBF .

History: NTF5P03T3G | NTLGF3402P

 

 
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