Справочник MOSFET. IRFL1006PBF

 

IRFL1006PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFL1006PBF
   Маркировка: FL1006
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.22 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для IRFL1006PBF

 

 

IRFL1006PBF Datasheet (PDF)

 ..1. Size:129K  international rectifier
 irfl1006pbf.pdf

IRFL1006PBF IRFL1006PBF

PD - 95316IRFL1006PbFHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedG Lead-FreeID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefi

 6.1. Size:127K  international rectifier
 irfl1006.pdf

IRFL1006PBF IRFL1006PBF

PD - 91876IRFL1006HEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedGID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined wi

 9.1. Size:197K  international rectifier
 irfl110pbf.pdf

IRFL1006PBF IRFL1006PBF

PD - 95317IRFL110PbFHEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive Requirements Lead-FreeID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fast

 9.2. Size:244K  international rectifier
 irfl110.pdf

IRFL1006PBF IRFL1006PBF

PD - 90861AIRFL110HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive RequirementsID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rug

 9.3. Size:1503K  vishay
 irfl110 sihfl110.pdf

IRFL1006PBF IRFL1006PBF

IRFL110, SiHFL110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 Fast SwitchingQgd (nC) 3.8 Ease of Paralleling Simple Drive R

 9.4. Size:1977K  cn vbsemi
 irfl110tr.pdf

IRFL1006PBF IRFL1006PBF

IRFL110TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

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