IRFL4105PBF Todos los transistores

 

IRFL4105PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFL4105PBF

Código: FL4105

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 230 pF

Resistencia drenaje-fuente RDS(on): 0.045 Ohm

Empaquetado / Estuche: SOT223

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IRFL4105PBF Datasheet (PDF)

1.1. irfl4105pbf.pdf Size:158K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD- 95319 IRFL4105PbF HEXFET® Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045Ω Fast Switching G Fully Avalanche Rated ID = 3.7A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

2.1. irfl4105.pdf Size:168K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD- 91381A IRFL4105 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045? Fast Switching G Fully Avalanche Rated ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

 5.1. irfl4310.pdf Size:313K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 91368B IRFL4310 HEXFET Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

5.2. irfl4310pbf.pdf Size:659K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 95144 IRFL4310PbF HEXFET® Power MOSFET D Surface Mount VDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of Paralleling RDS(on) = 0.20Ω Advanced Process Technology G Ultra Low On-Resistance ID = 1.6A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 5.3. irfl4315pbf.pdf Size:197K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 95258A IRFL4315PbF HEXFET® Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 185mW@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 l Fully Characterized Avalanche Voltage and Current l Lead-Free Abs

5.4. irfl4315.pdf Size:121K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 94445 IRFL4315 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 150V 185m? ?@VGS = 10V 2.6A ? ? Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage and Current Abs

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