All MOSFET. IRFL4105PBF Datasheet

 

IRFL4105PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFL4105PBF

SMD Transistor Code: FL4105

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 230 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: SOT223

IRFL4105PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFL4105PBF Datasheet (PDF)

1.1. irfl4105pbf.pdf Size:158K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD- 95319 IRFL4105PbF HEXFET® Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045Ω Fast Switching G Fully Avalanche Rated ID = 3.7A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

2.1. irfl4105.pdf Size:168K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD- 91381A IRFL4105 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045? Fast Switching G Fully Avalanche Rated ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

 5.1. irfl4310.pdf Size:313K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 91368B IRFL4310 HEXFET Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

5.2. irfl4310pbf.pdf Size:659K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 95144 IRFL4310PbF HEXFET® Power MOSFET D Surface Mount VDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of Paralleling RDS(on) = 0.20Ω Advanced Process Technology G Ultra Low On-Resistance ID = 1.6A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 5.3. irfl4315pbf.pdf Size:197K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 95258A IRFL4315PbF HEXFET® Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 185mW@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 l Fully Characterized Avalanche Voltage and Current l Lead-Free Abs

5.4. irfl4315.pdf Size:121K _international_rectifier

IRFL4105PBF
IRFL4105PBF

PD - 94445 IRFL4315 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 150V 185m? ?@VGS = 10V 2.6A ? ? Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage and Current Abs

Datasheet: IRFL014NPBF , IRFL014PBF , IRFL024NPBF , IRFL024ZPBF , IRFL1006PBF , IRFL110PBF , IRFL210PBF , IRFL214PBF , APT50M38JFLL , IRFL4310PBF , IRFL4315PBF , IRFL9014PBF , IRFL9110PBF , IRLZ44PBF , IRLZ44S , IRLZ44SPBF , IRLZ44ZLPBF .

 
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