IRLZ44ZLPBF Todos los transistores

PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features Logic Level HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 13.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 51A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achi

PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features Logic Level HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 13.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 51A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achi

PD - 97682 AUTOMOTIVE GRADE AUIRLZ44Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) typ. 11m G Repetitive Avalanche Allowed up to max. 13.5m Tjmax S Lead-Free, RoHS Compliant ID 51A Automotive Qualified * Description D Specifically

Isc N-Channel MOSFET Transistor IRLZ44ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ44Z IIRLZ44Z FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM