IRLZ44ZSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLZ44ZSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 80 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 16 V
Tensión umbral compuerta-fuente Vgs(th): 3 V
Corriente continua de drenaje (Id): 51 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 160 nS
Conductancia de drenaje-sustrato (Cd): 230 pF
Resistencia drenaje-fuente RDS(on): 0.0135 Ohm
Empaquetado / Estuche: TO263
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IRLZ44ZSPBF Datasheet (PDF)
1.1. irlz44zlpbf irlz44zpbf irlz44zspbf.pdf 
Size:381K _upd
PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features Logic Level HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 13.5mΩ Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 51A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achi
4.1. irlz44npbf.pdf Size:223K _upd
PD - 94831 IRLZ44NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.022Ω l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest
4.2. irlz44nlpbf irlz44nspbf.pdf Size:340K _upd
IRLZ44NS/LPbF l Logic-Level Gate Drive ® l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature DS(on) Ω l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description
4.3. irlz44s irlz44spbf.pdf Size:436K _upd
IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Surface Mount RDS(on) ()VGS = 5.0 V 0.028 • Available in Tape and Reel Qg (Max.) (nC) 66 • Dynamic dV/dt Rating • Logic-Level Gate Drive Qgs (nC) 12 • RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 • 175 °C Operating
4.4. irlz44pbf.pdf Size:1738K _upd
IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Logic-Level Gate Drive RDS(on) (Ω)VGS = 5.0 V 0.028 RoHS* • RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 12 • Fast Switching Qgd (nC) 43 Configuration Single • Ease of Paralleling • Si
4.5. irlz44n.pdf Size:102K _international_rectifier
PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per
4.6. irlz44.pdf Size:883K _international_rectifier
PD - 94886 IRLZ44PbF Lead-Free 12/11/03 Document Number: 91328 www.vishay.com 1 IRLZ44PbF Document Number: 91328 www.vishay.com 2 IRLZ44PbF Document Number: 91328 www.vishay.com 3 IRLZ44PbF Document Number: 91328 www.vishay.com 4 IRLZ44PbF Document Number: 91328 www.vishay.com 5 IRLZ44PbF Document Number: 91328 www.vishay.com 6 IRLZ44PbF TO-220AB Package Outline Dime
4.7. irlz44s.pdf Size:282K _international_rectifier
4.8. irlz44ns.pdf Size:178K _international_rectifier
PD - 91347D IRLZ44NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach
4.9. irlz44spbf.pdf Size:837K _international_rectifier
PD- 95393 IRLZ44SPbF Lead-Free 06/10/04 Document Number: 91329 www.vishay.com 1 IRLZ44SPbF Document Number: 91329 www.vishay.com 2 IRLZ44SPbF Document Number: 91329 www.vishay.com 3 IRLZ44SPbF Document Number: 91329 www.vishay.com 4 IRLZ44SPbF Document Number: 91329 www.vishay.com 5 IRLZ44SPbF Document Number: 91329 www.vishay.com 6 IRLZ44SPbF Document Number: 91329 w
4.10. irlz44a.pdf Size:217K _samsung
IRLZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.025 ? Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 50 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rat
4.11. irlz44s sihlz44s.pdf Size:411K _vishay
IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) (?)VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating Temperature Fast
4.12. irlz44 sihlz44.pdf Size:1736K _vishay
IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) (?)VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Simple Drive Requirem
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