IRLZ44ZSPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLZ44ZSPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 51
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 160
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135
Ohm
Package:
TO263
IRLZ44ZSPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLZ44ZSPBF
Datasheet (PDF)
..1. Size:381K international rectifier
irlz44zlpbf irlz44zpbf irlz44zspbf.pdf
PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi
..2. Size:381K infineon
irlz44zpbf irlz44zspbf irlz44zlpbf.pdf
PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi
6.1. Size:257K inchange semiconductor
irlz44zs.pdf
Isc N-Channel MOSFET Transistor IRLZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
7.1. Size:215K infineon
auirlz44z.pdf
PD - 97682AUTOMOTIVE GRADEAUIRLZ44ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) typ.11mG Repetitive Avalanche Allowed up to max. 13.5mTjmaxS Lead-Free, RoHS CompliantID 51A Automotive Qualified *DescriptionDSpecifically
7.2. Size:251K inchange semiconductor
irlz44z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44ZIIRLZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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