All MOSFET. IRLZ44ZSPBF Datasheet

 

IRLZ44ZSPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLZ44ZSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 51 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO263

 IRLZ44ZSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLZ44ZSPBF Datasheet (PDF)

 ..1. Size:381K  international rectifier
 irlz44zlpbf irlz44zpbf irlz44zspbf.pdf

IRLZ44ZSPBF IRLZ44ZSPBF

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

 ..2. Size:381K  infineon
 irlz44zpbf irlz44zspbf irlz44zlpbf.pdf

IRLZ44ZSPBF IRLZ44ZSPBF

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

 6.1. Size:257K  inchange semiconductor
 irlz44zs.pdf

IRLZ44ZSPBF IRLZ44ZSPBF

Isc N-Channel MOSFET Transistor IRLZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 7.1. Size:215K  infineon
 auirlz44z.pdf

IRLZ44ZSPBF IRLZ44ZSPBF

PD - 97682AUTOMOTIVE GRADEAUIRLZ44ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) typ.11mG Repetitive Avalanche Allowed up to max. 13.5mTjmaxS Lead-Free, RoHS CompliantID 51A Automotive Qualified *DescriptionDSpecifically

 7.2. Size:251K  inchange semiconductor
 irlz44z.pdf

IRLZ44ZSPBF IRLZ44ZSPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44ZIIRLZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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