IRLZ44NLPBF Todos los transistores

 

IRLZ44NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLZ44NLPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 84 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO262 TO262AA
     - Selección de transistores por parámetros

 

IRLZ44NLPBF Datasheet (PDF)

 ..1. Size:340K  international rectifier
 irlz44nlpbf irlz44nspbf.pdf pdf_icon

IRLZ44NLPBF

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription

 6.1. Size:340K  international rectifier
 irlz44ns irlz44nl.pdf pdf_icon

IRLZ44NLPBF

IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription

 7.1. Size:102K  international rectifier
 irlz44n.pdf pdf_icon

IRLZ44NLPBF

PD - 9.1346BIRLZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

 7.2. Size:223K  international rectifier
 irlz44npbf.pdf pdf_icon

IRLZ44NLPBF

PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3272-01SJ | SM8205AO

 

 
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