IRLZ44NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLZ44NLPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 110 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 47 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Tiempo de subida (tr): 84 nS
Conductancia de drenaje-sustrato (Cd): 400 pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: TO262 TO262AA
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IRLZ44NLPBF Datasheet (PDF)
irlz44nlpbf irlz44nspbf.pdf
IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription
irlz44ns irlz44nl.pdf
PD - 91347DIRLZ44NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques
irlz44ns irlz44nl.pdf
IRLZ44NS/LPbFl Logic-Level Gate Drive l Advanced Process TechnologyDl Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL)l 175C Operating Temperature DS(on) l Fast SwitchingGl Fully Avalanche Rated D l Lead-FreeSDescription
irlz44n.pdf
PD - 9.1346BIRLZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan
irlz44npbf.pdf
PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest
irlz44npbf.pdf
PD - 94831IRLZ44NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.022l Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest
irlz44n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44N IIRLZ44NFEATURESStatic drain-source on-resistance:RDS(on) 22mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
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