IRLZ44NLPBF Todos los transistores

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IRLZ44NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLZ44NLPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 110 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Tensión umbral compuerta-fuente Vgs(th): 2 V

Corriente continua de drenaje (Id): 47 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 84 nS

Conductancia de drenaje-sustrato (Cd): 400 pF

Resistencia drenaje-fuente RDS(on): 0.022 Ohm

Empaquetado / Estuche: TO262_TO262AA

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IRLZ44NLPBF Datasheet (PDF)

1.1. irlz44nlpbf irlz44nspbf.pdf Size:340K _upd

IRLZ44NLPBF
IRLZ44NLPBF

 IRLZ44NS/LPbF l Logic-Level Gate Drive ® l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature DS(on) Ω l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

3.1. irlz44npbf.pdf Size:223K _upd

IRLZ44NLPBF
IRLZ44NLPBF

PD - 94831 IRLZ44NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.022Ω l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

3.2. irlz44n.pdf Size:102K _international_rectifier

IRLZ44NLPBF
IRLZ44NLPBF

PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per

 3.3. irlz44ns.pdf Size:178K _international_rectifier

IRLZ44NLPBF
IRLZ44NLPBF

PD - 91347D IRLZ44NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ44NS) Low-profile through-hole (IRLZ44NL) 175C Operating Temperature RDS(on) = 0.022? Fast Switching G Fully Avalanche Rated ID = 47A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

Otros transistores... IRFL9014PBF , IRFL9110PBF , IRLZ44PBF , IRLZ44S , IRLZ44SPBF , IRLZ44ZLPBF , IRLZ44ZPBF , IRLZ44ZSPBF , IRF630 , IRLZ44NPBF , IRLZ44NSPBF , IRLZ34L , IRLZ34NLPBF , IRLZ34NPBF , IRLZ34NSPBF , IRLZ34PBF , IRLZ34S .

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